CREE SIC MOSFET GATE DRIVER

About Cree Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting. Existing V silicon MOSFETs have severe limitations for high-frequency switching circuits due to extremely high switching losses and poor internal body diodes. Register by October 18, This platform delivers vastly superior characteristics, thereby providing power designers with the potential to innovate smaller, faster, cooler, and more-efficient power solutions. Cree Social Tweets by cree Tweets by Cree. This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Research Triangle Park, NC.

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Cree Redefines the Discrete Power MOSFET Landscape with the Industry’s First V SiC MOSFET

Please refer to www. The GSMA Mobile World Congress is the world’s largest exhibition for the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a.

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Without question, it is beyond the reach of anything currently achievable with silicon. Moreover, in addition to the industry-standard TO and TO packages, the new device is also offered in a low-impedance D2Pak-7L surface-mount package with a Kelvin connection to help minimize gate ringing.

Cree Social Tweets by cree Tweets by Cree.

MWC Barcelona The GSMA Mobile World Congress soc the world’s largest exhibition for the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a. You must have JavaScript enabled in your browser to utilize the functionality of this website.

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New device performance eclipses incumbent soc solutions, providing significant system-level performance and cost advantages in a range of high-frequency power-electronics applications. Upcoming Events FEB 6.

Optimized for high-frequency power-electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated.

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About Cree Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting.

Register by October 18, Research Triangle Park, NC. Mosget platform delivers vastly superior characteristics, thereby providing power designers with the potential to innovate smaller, faster, cooler, and more-efficient power solutions.

Existing V silicon MOSFETs have severe limitations for high-frequency switching circuits due to extremely high switching losses and poor internal body diodes.